Follow Micron's progression since its inception in 1978 to becoming one of the world's leading providers of advanced semiconductor solutions. Through its worldwide operations, Micron manufactures and markets DRAM, Flash memory, CMOS image sensors, other semiconductor components, and memory modules for use in leading-edge computing, consumer, networking, server, mobile, and automotive products.
1978
Micron Technology, Inc., is headquartered in Boise, Idaho, and incorporated under the laws of the state of Idaho.
1979
Engineers finalize design for a 64K DRAM.
1980
Ground is broken for a 50,000-square-foot wafer fabrication plant on 200 acres in Boise.
1981
First fabrication facility is completed. First 64K DRAM product is shipped.
1983
First "shrink" of Micron’s 64K DRAM die is completed.
First assembly and test facility is completed.
1984
Micron is reincorporated under the laws of the state of Delaware and becomes a publicly held company (NASDAQ: DRAM) in June 1984 with the sale of 2.1 million shares of common stock at an initial price of $14 per share.
256K DRAM is introduced. A second fabrication plant, central utilities plant, and an assembly and test facility are constructed.
1985
Seven of America's leading semiconductor makers exit the DRAM business due to a drastic decline in prices for memory.
1986
The U.S. and Japan enter into a semiconductor trade agreement intended to establish fair market value prices for DRAM.
1987
Micron introduces the 1-megabit DRAM.
1988
Micron introduces the 256K video RAM, 16K, 64K, and 256K fast static RAM, and add-in memory products assembled by Micron's Memory Applications Group (MAG).
1989
Major portions of a $250 million expansion project, including a third fabrication facility, are completed.
1990
A second assembly facility is completed.
On November 30, Micron lists its common stock on the New York Stock Exchange, under the symbol MU.
1991
A new test facility is completed.
Micron begins the transition to the 4-megabit DRAM.
Micron creates Edge Technology, Inc., (a precursor to Micron Electronics) to manufacture memory-intensive personal computers at competitive prices.
1992
Sampling begins for the 16-megabit DRAM.
1993
Micron’s Fab III is named "Top U.S. Fab of 1993" by Semiconductor International magazine.
Micron begins a $60 million expansion project.
1994
A 5-for-2 stock split is announced.
Micron is listed on the Fortune 500 for the first time.
Steve Appleton is named President, Chairman, and CEO.
1995
A site near Lehi, Utah, is selected for the new manufacturing complex.
A 2-for-1 stock split is announced.
1996
Micron creates Crucial Technology, a division to market and sell memory upgrades to end-users.
ZEOS International, Ltd., Micron Computer, Inc., and Micron Custom Manufacturing Services, Inc. (MCMS) merge to become Micron Electronics, Inc.
1997
Micron becomes one of the first companies in the U.S. to attain ISO 14001 certification.
Micron receives the EPA’s Evergreen Award for environmental responsibility.
Dell Computer announces it has received 256-megabit DRAM samples from Micron.
1998
Micron becomes one of the largest memory producers in the world with the purchase of Texas Instruments' worldwide memory operations.
Intel invests $500 million in Micron to support the development and supply of next-generation memory products.
1999
Crucial Technology launches its direct memory upgrade business in the United Kingdom.
Micron opens the UK Design Centre to support Micron’s research and development efforts, including the development of embedded products.
2000
The Micron Technology Foundation, Inc., is established to advance science and technology education and support community organizations.
Micron establishes test operations in Lehi, Utah, and opens a module assembly and testing operation in the United Kingdom.
The Company announces a 2-for-1 stock split.
2001
KMT Semiconductor, Ltd., in Nishiwaki City, Japan, becomes a wholly-owned subsidiary with Micron’s purchase of Kobe Steel, Ltd.’s, interest in the joint-venture operation.
Micron is ranked #1 in the semiconductor industry by the Massachusetts Institute of Technology's Technology Review magazine in its Patent Scorecard 2001.
2002
Micron acquires Toshiba's commodity DRAM operations at Dominion Semiconductor, LLC, a subsidiary of Toshiba Corporation of Japan, located in Manassas, Virginia.
Micron demonstrates the industry’s first 1-gigabit double data rate (DDR) SDRAM components manufactured on 0.11µm process technology.
2003
Micron delivers the industry's first 4-gigabyte DDR SDRAM registered dual in-line memory module (DIMM) to Intel using the Company's 1-gigabyte DDR SDRAM manufactured on the 0.11µm process.
Micron introduces the 1.3-megapixel CMOS image sensor, which achieves image quality comparable to CCD while taking advantage of the benefits of CMOS technology.
2004
Semiconductor Insights, the leader in technical and patent analyses of ICs, awards Micron’s 6F2 cell architecture the 2004 INSIGHT Award for Most Innovative DRAM.
Micron ships its first production 90nm, 2-gigabit NAND Flash memory products.
2005
Micron introduces the industry's fastest 1.8V Flash memory for mobile applications.
Micron introduces a family of Mobile LPDRAM devices that provide low standby power and improved stackability.
Micron introduces Endur-IC™ technology, which delivers low power consumption, increased reliability, and an overall robustness required for mobile applications.
Micron emerges as the number one provider of CMOS image sensors for camera phones, capturing more than 30% of the market share.
Micron and Intel announce their agreement to form a new company—IM Flash Technologies—to manufacture NAND Flash memory.
Boise manufacturing facility earns an award from the Pacific Northwest section of the American Water Works Association for "Innovation and Commitment to Water Conservation."
Micron’s DDR2 memory wins the prestigious AnandTech Editor’s Choice Award for providing the best performance and value.
2006
Micron...
Introduces the industry's first NAND Flash memory device built on 50nm process technology.
Introduces the world's first 8-megapixel image sensor on a 1/2.5-inch optical format (based on a 1.75-micron pixel design).
Introduces the world's densest server memory module (16-gigabyte).
Announces development of a 1.4-micron pixel image sensor design.
Begins shipping 8-gigabit and 4-gigabit NAND Flash devices, ideal for MP3, USB drive, and flash card applications.
Secures leadership position in digital image sensor products with 40% market share.
Enters into joint-venture partnership with Intel,creating IM Flash Technologies to manufacture NAND Flash memory.
Acquires Lexar Media to expand NAND Flash memory portfolio.
Expands assembly and test facility in Singapore and effectively doubles its capacity.
Introduces Osmium™ packaging technology.
Receives #1 ranking in the semiconductor industry in iplQ's 2006 Patent Scorecard for the fifth consecutive year.
Partners with Photronics on a leading-edge MP Mask Technology Center to supply photomasks for high-density, low-power chips.
2007
U.S. President Bush Recognizes Micron Technology for Helping Grow Economy Through Continued Investment
Micron Opens New Manufacturing Facility in China
Micron Reduces Data Center Power Consumption with New Aspen Memory Family of Energy-Efficient Products
Micron Technology Named 2007 Sun Best-in-Class Supplier
CMP's Semiconductor Insights Recognizes Micron's 78nm 1Gb DDR3 as Most Innovative DRAM
Micron Introduces RealSSD™ Family of Solid State Drives
2008
Micron Launches Aptina Imaging: A CMOS Image Sensor Division
Micron Continues Leadership in Energy-Efficient Memory Designs With New Low-Voltage DDR3 and Higher-Density DDR2 Parts
Micron and Nanya sign an agreement to create MeiYa Technology Corporation, a new DRAM joint venture.
Intel and Micron First to Deliver Sub-40 Nanometer NAND Flash Memory Device
Micron Introduces Next-Generation RealSSD™ Solid State Drives for Enterprise Server and Notebook Applications